BSC052N03SG参数规格_中文资料_数据手册PDF

BSC052N03SG概述

OptiMOS®2功率三极管 OptiMOS?2 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC1 for target applications

• Logic level / N-channel

• Excellent gate charge x R DSon product FOM

• Very low on-resistance R DSon

• Superior thermal resistance

• Avalanche rated; dv/dt rated

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Win Source:
MOSFET N-CH 30V 80A TDSON-8

BSC052N03SG中文资料参数规格

技术参数

额定电压DC 30.0 V

额定电流 80.0 A

输入电容 2.82 nF

栅电荷 22.0 nC

漏源极电压Vds 30.0 V

连续漏极电流Ids 80.0 A

耗散功率Max 2.8W Ta, 54W Tc

封装参数

安装方式 Surface Mount

封装 PG-TDSON-8

外形尺寸

封装 PG-TDSON-8

其他

产品生命周期 Obsolete

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BSC052N03SG

型号： BSC052N03SG

制造商： Infineon 英飞凌

描述：OptiMOS®2功率三极管 OptiMOS?2 Power-Transistor

替代型号BSC052N03SG