BSC110N15NS5ATMA1

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BSC110N15NS5ATMA1概述

晶体管, MOSFET, N沟道, 76 A, 150 V, 0.009 ohm, 10 V, 3.8 V

Description:

The new OptiMOS™ 5 150 V power MOSFETs from are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DSon up to 25 percent compared to the next best alternative in SuperSO8 and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge Q rr = 26 nC in SuperSO8 increases commutation ruggedness.

Summary of Features:

.
Lower R DSon without compromising FOM gd and FOM oss
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Lower output charge
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Ultra-low reverse recovery charge
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Increased commutation ruggedness
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Higher switching frequency possible

Benefits:

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Reduced paralleling
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Size reduction enabled with SuperSO8 best-in-class
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Higher power density designs
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More rugged products
.
System cost reduction
.
Improved EMI behavior
BSC110N15NS5ATMA1中文资料参数规格
技术参数

通道数 1

针脚数 8

漏源极电阻 0.009 Ω

耗散功率 125 W

阈值电压 3 V

漏源极电压Vds 150 V

上升时间 3.3 ns

输入电容Ciss 2080pF @75VVds

下降时间 2.9 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 125000 mW

封装参数

引脚数 8

封装 PG-TDSON-8

外形尺寸

长度 5.9 mm

宽度 5.15 mm

高度 1.27 mm

封装 PG-TDSON-8

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Low voltage

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

数据手册

在线购买BSC110N15NS5ATMA1
型号: BSC110N15NS5ATMA1
描述:晶体管, MOSFET, N沟道, 76 A, 150 V, 0.009 ohm, 10 V, 3.8 V

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