晶体管, MOSFET, N沟道, 76 A, 150 V, 0.009 ohm, 10 V, 3.8 V
Description:
The new OptiMOS™ 5 150 V power MOSFETs from are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DSon up to 25 percent compared to the next best alternative in SuperSO8 and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge Q rr = 26 nC in SuperSO8 increases commutation ruggedness.
Summary of Features:
Benefits:
通道数 1
针脚数 8
漏源极电阻 0.009 Ω
耗散功率 125 W
阈值电压 3 V
漏源极电压Vds 150 V
上升时间 3.3 ns
输入电容Ciss 2080pF @75VVds
下降时间 2.9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125000 mW
引脚数 8
封装 PG-TDSON-8
长度 5.9 mm
宽度 5.15 mm
高度 1.27 mm
封装 PG-TDSON-8
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Low voltage
RoHS标准 RoHS Compliant
含铅标准 无铅