BSS100

N沟道逻辑电平增强模式场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using "s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.

Features

\- : 0.22A, 100V. RDSON = 6W @ VGS = 10V.

  BSS123: 0.17A, 100V. RDSON = 6W @ VGS = 10V

\- High density cell design for extremely low RDSON.

\- Voltage controlled small signal switch.

\- Rugged and reliable.