BSZ070N08LS5ATMA1

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BSZ070N08LS5ATMA1概述

Trans MOSFET N-CH 80V 13A 8Pin TSDSON EP T/R

Description:

"s new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices" low gate charge Q g reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage V GSth allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

 

Summary of Features:

.
Low R DSon in small package
.
Low gate charge
.
Lower output charge
.
Logic level compatibility

Benefits:

.
Higher power density designs
.
Higher switching frequency
.
Reduced parts count wherever 5V supplies are available
.
Driven directly from microcontrollers slow switching
.
System cost reduction
BSZ070N08LS5ATMA1中文资料参数规格
技术参数

耗散功率 69 W

上升时间 4.8 ns

输入电容Ciss 1800pF @40VVds

下降时间 5.8 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 69000 mW

封装参数

引脚数 8

封装 PG-TSDSON-8

外形尺寸

封装 PG-TSDSON-8

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Wireless charging

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买BSZ070N08LS5ATMA1
型号: BSZ070N08LS5ATMA1
描述:Trans MOSFET N-CH 80V 13A 8Pin TSDSON EP T/R

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