BSZ096N10LS5ATMA1

BSZ096N10LS5ATMA1图片1
BSZ096N10LS5ATMA1图片2
BSZ096N10LS5ATMA1图片3
BSZ096N10LS5ATMA1图片4
BSZ096N10LS5ATMA1概述

N沟道 100V 40A

Description:

"s new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices" low gate charge Q g reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage V GSth allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

 

Summary of Features:

.
Low R DSon in small package
.
Low gate charge
.
Lower output charge
.
Logic level compatibility

Benefits:

.
Higher power density designs
.
Higher switching frequency
.
Reduced parts count wherever 5V supplies are available
.
Driven directly from microcontrollers slow switching
.
System cost reduction
BSZ096N10LS5ATMA1中文资料参数规格
技术参数

上升时间 4.6 ns

输入电容Ciss 1600pF @50VVds

下降时间 5.3 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2100 mW

封装参数

引脚数 8

封装 PG-TSDSON-8

外形尺寸

封装 PG-TSDSON-8

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Wireless charging

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BSZ096N10LS5ATMA1
型号: BSZ096N10LS5ATMA1
描述:N沟道 100V 40A

锐单商城 - 一站式电子元器件采购平台