BC847CW-7-F 编带
Jump-start your electronic circuit design with this versatile NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
频率 300 MHz
额定电压DC 45.0 V
额定电流 100 mA
耗散功率 200 mW
击穿电压集电极-发射极 45 V
最小电流放大倍数hFE 420 @2mA, 5V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
长度 2.2 mm
宽度 1.35 mm
高度 1 mm
封装 SOT-323-3
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC847CW-7-F Diodes 美台 | 当前型号 | 当前型号 |
BC847C-7-F 美台 | 类似代替 | BC847CW-7-F和BC847C-7-F的区别 |
BC850CW,115 恩智浦 | 功能相似 | BC847CW-7-F和BC850CW,115的区别 |
BC847CW-TP 美微科 | 功能相似 | BC847CW-7-F和BC847CW-TP的区别 |