BCW68H 系列 PNP 0.8 A 45 V 表面贴装 硅 中等功率 晶体管 - SOT-23
This specially engineered PNP GP BJT from Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 350 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 7 V.
频率 100 MHz
额定电压DC -45.0 V
额定电流 -800 mA
针脚数 3
极性 PNP
耗散功率 330 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.8A
最小电流放大倍数hFE 250 @100mA, 1V
额定功率Max 330 mW
直流电流增益hFE 350
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCW68HTA Diodes 美台 | 当前型号 | 当前型号 |
NSS40200LT1G 安森美 | 功能相似 | BCW68HTA和NSS40200LT1G的区别 |
BCW67B 英飞凌 | 功能相似 | BCW68HTA和BCW67B的区别 |
BCW67A 英飞凌 | 功能相似 | BCW68HTA和BCW67A的区别 |