Trans GP BJT NPN 30V 0.1A 3Pin SOT-323 T/R
- 双极 BJT - 单 NPN 30 V 100 mA 300MHz 200 mW 表面贴装型 SOT-323
立创商城:
NPN 30V 100mA
得捷:
TRANS NPN 30V 0.1A SOT323
艾睿:
The versatility of this NPN BC848CW-7-F GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
安富利:
Trans GP BJT NPN 30V 0.1A 3-Pin SOT-323 T/R
Chip1Stop:
Trans GP BJT NPN 30V 0.1A 3-Pin SOT-323 T/R
TME:
Transistor: NPN; bipolar; 30V; 100mA; 200mW; SOT323
儒卓力:
**NPN TRANS 30V 0,1A SOT323 **
Win Source:
TRANS NPN 30V 0.1A SC70-3
极性 NPN
耗散功率 200 mW
击穿电压集电极-发射极 30 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 420 @2mA, 5V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323
封装 SOT-323
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC848CW-7-F Diodes 美台 | 当前型号 | 当前型号 |
BC848CW-7 美台 | 完全替代 | BC848CW-7-F和BC848CW-7的区别 |
BC849CW,115 恩智浦 | 类似代替 | BC848CW-7-F和BC849CW,115的区别 |
BC848CW Diotec Semiconductor | 类似代替 | BC848CW-7-F和BC848CW的区别 |