Trans GP BJT NPN 45V 0.1A 350mW Automotive 3Pin SOT-23 T/R
Zetex brings you the solution to your high-voltage BJT needs with their NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
频率 300 MHz
极性 NPN
耗散功率 0.35 W
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 200 @2mA, 5V
额定功率Max 310 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 350 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC847C-13-F Diodes 美台 | 当前型号 | 当前型号 |
BC847B-7-F 美台 | 类似代替 | BC847C-13-F和BC847B-7-F的区别 |
BCW72T116 罗姆半导体 | 类似代替 | BC847C-13-F和BCW72T116的区别 |
BC847CLT1G 安森美 | 功能相似 | BC847C-13-F和BC847CLT1G的区别 |