BC846BLP4-7B 编带
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.
频率 300 MHz
额定功率 0.41 W
针脚数 3
极性 NPN
耗散功率 1 W
增益频宽积 300 MHz
击穿电压集电极-发射极 65 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 200 @2mA, 5V
最大电流放大倍数hFE 450 @2mA, 5V
额定功率Max 410 mW
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 410 mW
安装方式 Surface Mount
引脚数 3
封装 DFN1006-3
封装 DFN1006-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC846BLP4-7B Diodes 美台 | 当前型号 | 当前型号 |
BC846BM,315 安世 | 功能相似 | BC846BLP4-7B和BC846BM,315的区别 |