高频NPN晶体管阵列 High Frequency NPN Transistor Array
High Frequency NPN Transistor Array
The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz.
Features
• Gain Bandwidth Product fT . . . . . . . . . . . . . . . . . >1GHz
• Power Gain . . . . . . . . . . . . . . . . . . 30dB Typ at 100MHz
• Noise Figure. . . . . . . . . . . . . . . . . 3.5dB Typ at 100MHz
• Five Independent Transistors on a Common Substrate
• Pb-Free Plus Anneal Available RoHS Compliant
Applications
• VHF Amplifiers
• Multifunction Combinations - RF/Mixer/Oscillator
• Sense Amplifiers
• Synchronous Detectors
• VHF Mixers
• IF Converter
• IF Amplifiers
• Synthesizers
• Cascade Amplifiers
额定电压DC 15.0 V
额定电流 20.0 mA
通道数 5
极性 NPN
输入电容 5 pF
击穿电压集电极-发射极 15 V
增益 27dB ~ 30dB
最小电流放大倍数hFE 35 @5mA, 6V
额定功率Max 85 mW
工作温度Max 125 ℃
工作温度Min -55 ℃
耗散功率Max 85 mW
安装方式 Surface Mount
引脚数 16
封装 SOIC-16
封装 SOIC-16
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 Non-Compliant
含铅标准 Contains Lead
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CA3127M Intersil 英特矽尔 | 当前型号 | 当前型号 |
CA3127MZ 瑞萨电子 | 功能相似 | CA3127M和CA3127MZ的区别 |