CPH PNP 30V 1.5A
Bipolar BJT Transistor PNP 30V 1.5A 450MHz 900mW Surface Mount 3-CPH
得捷:
PNP EPITAXIAL PLANAR SILICON TRA
立创商城:
CPH3115-TL-E
艾睿:
ON Semiconductor brings you the solution to your high-voltage BJT needs with their PNP CPH3115-TL-E general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT PNP 30V 1.5A 3-Pin CPH T/R
Chip1Stop:
Trans GP BJT PNP 30V 1.5A 3-Pin CPH T/R
Verical:
Trans GP BJT PNP 30V 1.5A 900mW 3-Pin CPH T/R
Win Source:
TRANS PNP 30V 1.5A CPH3
频率 450 MHz
极性 PNP, P-Channel
耗散功率 0.9 W
击穿电压集电极-发射极 30 V
集电极最大允许电流 1.5A
最小电流放大倍数hFE 200 @100mA, 2V
额定功率Max 900 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 900 mW
安装方式 Surface Mount
引脚数 3
封装 CPH-3
封装 CPH-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CPH3115-TL-E ON Semiconductor 安森美 | 当前型号 | 当前型号 |
CPH3115-TL-H 安森美 | 类似代替 | CPH3115-TL-E和CPH3115-TL-H的区别 |