CPH3115-TL-E

CPH3115-TL-E图片1
CPH3115-TL-E图片2
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CPH3115-TL-E概述

CPH PNP 30V 1.5A

Bipolar BJT Transistor PNP 30V 1.5A 450MHz 900mW Surface Mount 3-CPH


得捷:
PNP EPITAXIAL PLANAR SILICON TRA


立创商城:
CPH3115-TL-E


艾睿:
ON Semiconductor brings you the solution to your high-voltage BJT needs with their PNP CPH3115-TL-E general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.


安富利:
Trans GP BJT PNP 30V 1.5A 3-Pin CPH T/R


Chip1Stop:
Trans GP BJT PNP 30V 1.5A 3-Pin CPH T/R


Verical:
Trans GP BJT PNP 30V 1.5A 900mW 3-Pin CPH T/R


Win Source:
TRANS PNP 30V 1.5A CPH3


CPH3115-TL-E中文资料参数规格
技术参数

频率 450 MHz

极性 PNP, P-Channel

耗散功率 0.9 W

击穿电压集电极-发射极 30 V

集电极最大允许电流 1.5A

最小电流放大倍数hFE 200 @100mA, 2V

额定功率Max 900 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 900 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 CPH-3

外形尺寸

封装 CPH-3

物理参数

材质 Silicon

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

CPH3115-TL-E引脚图与封装图
CPH3115-TL-E引脚图
CPH3115-TL-E封装图
CPH3115-TL-E封装焊盘图
在线购买CPH3115-TL-E
型号: CPH3115-TL-E
描述:CPH PNP 30V 1.5A
替代型号CPH3115-TL-E
型号/品牌 代替类型 替代型号对比

CPH3115-TL-E

ON Semiconductor 安森美

当前型号

当前型号

CPH3115-TL-H

安森美

类似代替

CPH3115-TL-E和CPH3115-TL-H的区别

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