TEXAS INSTRUMENTS CSD23381F4T 晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
P 通道 FemtoFET™ 功率 MOSFET,Texas Instruments
得捷:
MOSFET P-CH 12V 2.3A 3PICOSTAR
立创商城:
CSD23381F4T
德州仪器TI:
-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection
欧时:
Texas Instruments FemtoFET 系列 P沟道 MOSFET 晶体管 CSD23381F4T, 2.3 A, Vds=12 V, 3引脚 PICOSTAR封装
贸泽:
MOSFET 12V,P-Ch FemtoFET MOSFET
e络盟:
TEXAS INSTRUMENTS CSD23381F4T 晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
艾睿:
Create an effective common drain amplifier using this CSD23381F4T power MOSFET from Texas Instruments. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with femtofet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET P-CH 12V 2.3A 3-Pin PICOSTAR T/R
Verical:
Trans MOSFET P-CH 12V 2.3A 3-Pin PICOSTAR T/R
Win Source:
MOSFET P-CH 12V 2.3A 3PICOSTAR / P-Channel 12 V 2.3A Ta 500mW Ta Surface Mount 3-PICOSTAR
针脚数 3
漏源极电阻 0.15 Ω
极性 P-Channel
耗散功率 500 mW
阈值电压 950 mV
漏源极电压Vds 12 V
连续漏极电流Ids 2.3A
上升时间 3.9 ns
输入电容Ciss 236pF @6VVds
下降时间 7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 3
封装 PICOSTAR-3
长度 1.04 mm
宽度 0.64 mm
高度 0.35 mm
封装 PICOSTAR-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CSD23381F4T TI 德州仪器 | 当前型号 | 当前型号 |
CSD23381F4 德州仪器 | 类似代替 | CSD23381F4T和CSD23381F4的区别 |