CPH PNP 30V 3A
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
频率 380 MHz
极性 PNP, P-Channel
耗散功率 0.9 W
击穿电压集电极-发射极 30 V
集电极最大允许电流 3A
最小电流放大倍数hFE 200 @500mA, 2V
额定功率Max 900 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 900 mW
安装方式 Surface Mount
引脚数 3
封装 SC-96
封装 SC-96
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
CPH3109-TL-E ON Semiconductor 安森美 | 当前型号 | 当前型号 |
CPH3122-TL-E 安森美 | 功能相似 | CPH3109-TL-E和CPH3122-TL-E的区别 |