TEXAS INSTRUMENTS CSD17381F4T 晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
N 通道 FemtoFET™ 功率 MOSFET,Texas Instruments
### MOSFET ,Texas Instruments
欧时:
Texas Instruments FemtoFET 系列 Si N沟道 MOSFET CSD17381F4T, 3.1 A, Vds=30 V, 3引脚 PICOSTAR封装
得捷:
MOSFET N-CH 30V 3.1A 3PICOSTAR
立创商城:
CSD17381F4T
德州仪器TI:
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection
贸泽:
MOSFET 30V,N-Ch FemtoFET MOSFET
e络盟:
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
艾睿:
Increase the current or voltage in your circuit with this CSD17381F4T power MOSFET from Texas Instruments. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with femtofet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 30V 3.1A 3-Pin 0402 T/R
Verical:
Trans MOSFET N-CH 30V 3.1A 3-Pin PICOSTAR T/R
Newark:
# TEXAS INSTRUMENTS CSD17381F4T MOSFET Transistor, N Channel, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
针脚数 3
漏源极电阻 0.084 Ω
极性 N-Channel
耗散功率 500 mW
阈值电压 850 mV
漏源极电压Vds 30 V
上升时间 1.4 ns
输入电容Ciss 150pF @15VVds
下降时间 3.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 3
封装 PICOSTAR-3
长度 1.04 mm
宽度 0.64 mm
高度 0.35 mm
封装 PICOSTAR-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CSD17381F4T TI 德州仪器 | 当前型号 | 当前型号 |
CSD17381F4 德州仪器 | 类似代替 | CSD17381F4T和CSD17381F4的区别 |