TEXAS INSTRUMENTS CSD23382F4T 晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
This power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with femtofet technology.
针脚数 3
漏源极电阻 0.066 Ω
极性 P-Channel
耗散功率 500 mW
阈值电压 800 mV
漏源极电压Vds 12 V
连续漏极电流Ids 3.5A
上升时间 25 ns
输入电容Ciss 235pF @6VVds
下降时间 41 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500mW Ta
安装方式 Surface Mount
引脚数 3
封装 PICOSTAR-3
封装 PICOSTAR-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
CSD23382F4T TI 德州仪器 | 当前型号 | 当前型号 |
CSD23382F4 德州仪器 | 类似代替 | CSD23382F4T和CSD23382F4的区别 |