CSD23202W10T

TEXAS INSTRUMENTS  CSD23202W10T  晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV

The is a NexFET™ P-channel Power MOSFET designed to deliver the lowest ON-resistance and gate charge in a small 1 × 1mm outline. It has excellent thermal characteristics in an ultra-low profile.

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Ultra-low Qg and Qgd

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Low profile 0.62mm height

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3kV Gate ESD protection

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Halogen-free

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-55 to 150°C Operating junction temperature range