CJD200 TR13 PBFREE

CJD200 TR13 PBFREE图片1
CJD200 TR13 PBFREE概述

Trans GP BJT NPN 25V 5A 3Pin2+Tab DPAK T/R

Add switching and amplifying capabilities to your electronic circuit with this NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 8 V. Its maximum power dissipation is 1400 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

CJD200 TR13 PBFREE中文资料参数规格
技术参数

频率 65 MHz

耗散功率 1.4 W

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 1400 mW

封装参数

引脚数 3

封装 DPAK-252

外形尺寸

封装 DPAK-252

物理参数

材质 Silicon

其他

包装方式 Tape & Reel TR

符合标准

RoHS标准

海关信息

ECCN代码 EAR99

数据手册

在线购买CJD200 TR13 PBFREE
型号: CJD200 TR13 PBFREE
制造商: Central Semiconductor
描述:Trans GP BJT NPN 25V 5A 3Pin2+Tab DPAK T/R

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