TEXAS INSTRUMENTS CSD17575Q3T 晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0019 ohm, 10 V, 1.4 V
Amplify electronic signals and switch between them with the help of Texas Instruments" power MOSFET. Its maximum power dissipation is 2800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology.
针脚数 8
漏源极电阻 0.0019 Ω
极性 N-Channel
耗散功率 108 W
阈值电压 1.4 V
漏源极电压Vds 30 V
连续漏极电流Ids 60A
上升时间 10 ns
输入电容Ciss 4420pF @15VVds
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.8W Ta, 108W Tc
安装方式 Surface Mount
引脚数 8
封装 VSON-CLIP
封装 VSON-CLIP
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
CSD17575Q3T TI 德州仪器 | 当前型号 | 当前型号 |
CSD17575Q3 德州仪器 | 功能相似 | CSD17575Q3T和CSD17575Q3的区别 |