TEXAS INSTRUMENTS CSD16570Q5BT 晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V
N 通道 NexFET™ 功率 MOSFET,Texas Instruments
得捷:
MOSFET N-CH 25V 100A 8VSON
立创商城:
CSD16570Q5BT
德州仪器TI:
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm
欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD16570Q5BT, 456 A, Vds=25 V, 8引脚 VSON-CLIP封装
贸泽:
MOSFET 25V NCH NexFET Pwr MOSFET
e络盟:
晶体管, MOSFET, N沟道, 100 A, 25 V, 490 µohm, 10 V, 1.5 V
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments&s; CSD16570Q5BT power MOSFET can provide a solution. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology.
安富利:
Trans MOSFET N-CH 25V 59A 8-Pin VSON T/R
TME:
Transistor: N-MOSFET; unipolar; 25V; 100A; 195W; VSON-CLIP8 5x6mm
Verical:
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
Newark:
# TEXAS INSTRUMENTS CSD16570Q5BT MOSFET Transistor, N Channel, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V
针脚数 8
漏源极电阻 0.00049 Ω
极性 N-Channel
耗散功率 195 W
阈值电压 1.5 V
漏源极电压Vds 25 V
连续漏极电流Ids 100A
上升时间 43 ns
输入电容Ciss 10700pF @12VVds
下降时间 72 ns
工作温度Max 85 ℃
工作温度Min -55 ℃
耗散功率Max 3.2W Ta, 195W Tc
安装方式 Surface Mount
引脚数 8
封装 VSON-Clip-8
长度 5 mm
宽度 6 mm
高度 1 mm
封装 VSON-Clip-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15