TEXAS INSTRUMENTS CSD16327Q3 晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V
N 通道 NexFET™ 功率 MOSFET,Texas Instruments
得捷:
MOSFET N-CH 25V 60A 8VSON
立创商城:
CSD16327Q3
德州仪器TI:
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm
欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD16327Q3, 60 A, Vds=25 V, 8引脚 SON封装
艾睿:
Compared to traditional transistors, CSD16327Q3 power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R
Chip1Stop:
Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R
Verical:
Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R
Newark:
# TEXAS INSTRUMENTS CSD16327Q3 MOSFET Transistor, N Channel, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V
针脚数 8
漏源极电阻 0.0034 Ω
极性 N-Channel
耗散功率 3 W
阈值电压 1.2 V
漏源极电压Vds 25 V
连续漏极电流Ids 21A
上升时间 15 ns
输入电容Ciss 1300pF @12.5VVds
额定功率Max 3 W
下降时间 6.3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3W Ta
安装方式 Surface Mount
引脚数 8
封装 PowerTDFN-8
长度 3.4 mm
宽度 3.4 mm
高度 1.1 mm
封装 PowerTDFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Contains Lead
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CSD16327Q3 TI 德州仪器 | 当前型号 | 当前型号 |
CSD16406Q3 德州仪器 | 功能相似 | CSD16327Q3和CSD16406Q3的区别 |
CSD16340Q3 德州仪器 | 功能相似 | CSD16327Q3和CSD16340Q3的区别 |
CSD16323Q3 德州仪器 | 功能相似 | CSD16327Q3和CSD16323Q3的区别 |