CSD17575Q3

30V、N 沟道 NexFET MOSFET™、单路、SON3x3、3.2mΩ 8-VSON-CLIP

This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

得捷:
MOSFET N-CH 30V 60A 8VSON

欧时:
CSD17575Q3, TransMOSFETN-CH

立创商城:
CSD17575Q3

德州仪器TI:
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm

贸泽:
MOSFET 30V, N-channel NexFET Pwr MOSFET

艾睿:
Make an effective common source amplifier using this CSD17575Q3 power MOSFET from Texas Instruments. Its maximum power dissipation is 2800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 30V 60A 8-Pin SON T/R

Verical:
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R