双路 N 通道 NexFET™ 功率 MOSFET
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications
针脚数 12
漏源极电阻 0.029 Ω
极性 Dual N-Channel
耗散功率 1.5 W
阈值电压 1 V
漏源极电压Vds 25 V
连续漏极电流Ids 4.5A
上升时间 4.3 ns
输入电容Ciss 585pF @12.5VVds
额定功率Max 1.5 W
下降时间 2.9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1500 mW
安装方式 Surface Mount
引脚数 12
封装 UFBGA-12
封装 UFBGA-12
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 正在供货
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15