30V N 通道 NexFET™ 功率 MOSFET
N 通道 NexFET™ 功率 MOSFET,Texas Instruments
### MOSFET ,Texas Instruments
立创商城:
N沟道 30V 24A
得捷:
MOSFET N-CH 30V 24A/100A 8VSON
德州仪器TI:
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm
欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD17306Q5A, 100 A, Vds=30 V, 8引脚 SON封装
e络盟:
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0029 ohm, 8 V, 1.1 V
艾睿:
This CSD17306Q5A power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 30V 24A 8-Pin SON EP T/R
Chip1Stop:
Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R
Verical:
Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R
Win Source:
MOSFET N-CH 30V 100A 8SON
针脚数 8
漏源极电阻 2.9 mΩ
极性 N-Channel
耗散功率 3.2 W
阈值电压 1.1 V
漏源极电压Vds 30 V
连续漏极电流Ids 100 A
上升时间 13.1 ns
输入电容Ciss 2170pF @15VVds
额定功率Max 3.2 W
下降时间 6.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.2W Ta
安装方式 Surface Mount
引脚数 8
封装 VSON-FET-8
长度 5.8 mm
宽度 5 mm
高度 1.1 mm
封装 VSON-FET-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 正在供货
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CSD17306Q5A TI 德州仪器 | 当前型号 | 当前型号 |
CSD17310Q5A 德州仪器 | 类似代替 | CSD17306Q5A和CSD17310Q5A的区别 |
CSD17305Q5A 德州仪器 | 类似代替 | CSD17306Q5A和CSD17305Q5A的区别 |
CSD17308Q3 德州仪器 | 功能相似 | CSD17306Q5A和CSD17308Q3的区别 |