30V N 通道 NexFET™ 功率 MOSFET,Vgs 为 20V
N 通道 NexFET™ 功率 MOSFET,Texas Instruments
### MOSFET ,Texas Instruments
得捷:
MOSFET N-CH 30V 100A 8VSON
立创商城:
N沟道 30V 100A
德州仪器TI:
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4 mOhm
欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD17506Q5A, 100 A, Vds=30 V, 8引脚 SON封装
e络盟:
TEXAS INSTRUMENTS CSD17506Q5A 晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V
艾睿:
Compared to traditional transistors, CSD17506Q5A power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 30V 23A 8-Pin SON EP T/R
Chip1Stop:
Trans MOSFET N-CH 30V 23A 8-Pin VSONP EP T/R
Verical:
Trans MOSFET N-CH 30V 23A 8-Pin VSONP EP T/R
Newark:
# TEXAS INSTRUMENTS CSD17506Q5A MOSFET Transistor, N Channel, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V
Win Source:
MOSFET N-CH 30V 100A 8SON
DeviceMart:
MOSFET N-CH 30V 100A 8SON
通道数 1
针脚数 8
漏源极电阻 0.0032 Ω
极性 N-Channel
耗散功率 3.2 W
阈值电压 1.3 V
漏源极电压Vds 30 V
连续漏极电流Ids 23A
上升时间 13 ns
输入电容Ciss 1650pF @15VVds
额定功率Max 3.2 W
下降时间 5.3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.2W Ta
安装方式 Surface Mount
引脚数 8
封装 PowerTDFN-8
长度 6.1 mm
宽度 5 mm
高度 1.1 mm
封装 PowerTDFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 正在供货
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CSD17506Q5A TI 德州仪器 | 当前型号 | 当前型号 |
CSD17507Q5A 德州仪器 | 类似代替 | CSD17506Q5A和CSD17507Q5A的区别 |
CSD17510Q5A 德州仪器 | 类似代替 | CSD17506Q5A和CSD17510Q5A的区别 |
CSD17505Q5A 德州仪器 | 类似代替 | CSD17506Q5A和CSD17505Q5A的区别 |