N 通道 NexFET™ 功率 MOSFET
N 通道 NexFET™ 功率 MOSFET,Texas Instruments
得捷:
MOSFET N-CH 25V 34A/100A 8VSON
立创商城:
CSD16414Q5
德州仪器TI:
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm
欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD16414Q5, 100 A, Vds=25 V, 8引脚 SON封装
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the CSD16414Q5 power MOSFET, developed by Texas Instruments. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology.
安富利:
Trans MOSFET N-CH 25V 34A 8-Pin SON EP T/R
Chip1Stop:
Trans MOSFET N-CH 25V 34A 8-Pin VSON-CLIP EP T/R
Verical:
Trans MOSFET N-CH 25V 34A 8-Pin VSON-CLIP EP T/R
Newark:
# TEXAS INSTRUMENTS CSD16414Q5 MOSFET Transistor, N Channel, 100 A, 25 V, 1.5 mohm, 10 V, 1.6 V
Win Source:
MOSFET N-CH 25V 100A 8-SON
通道数 1
漏源极电阻 0.0015 Ω
极性 N-Channel
耗散功率 3.2 W
阈值电压 1.6 V
漏源极电压Vds 25 V
连续漏极电流Ids 100 A
上升时间 24 ns
输入电容Ciss 3650pF @12.5VVds
额定功率Max 3.2 W
下降时间 11.1 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.2W Ta
安装方式 Surface Mount
引脚数 8
封装 VSON-Clip-8
长度 6.1 mm
宽度 5.1 mm
高度 1.05 mm
封装 VSON-Clip-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 正在供货
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CSD16414Q5 TI 德州仪器 | 当前型号 | 当前型号 |
CSD16401Q5 德州仪器 | 类似代替 | CSD16414Q5和CSD16401Q5的区别 |
CSD16407Q5 德州仪器 | 类似代替 | CSD16414Q5和CSD16407Q5的区别 |
CSD16408Q5 德州仪器 | 类似代替 | CSD16414Q5和CSD16408Q5的区别 |