CNY171SVM

DIP6 表面贴装 单通道 70 V 7500 Vrms 光电晶体管 光耦合器

Description

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

Features

■CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix eg. CNY17F2M

■VDE recognized

– Add option V for white package e.g., CNY17F2VM

– Add option ‘300’ for black package e.g., CNY17F2300

■Current transfer ratio in select groups

■High BVCEO—70V minimum CNY17X/M, CNY17FX/M,MOC8106/7/8

■Closely matched current transfer ratio CTR minimizes unit to-unit variation.

■Verylow coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptabilityCNY17FX/M, MOC810X