60V、N 沟道 NexFET MOSFET™、单路、SON5x6、5.9mΩ 8-VSONP -55 to 150
Description
This 4.7 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power
conversion applications.
Features
• Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Motor Control
得捷:
MOSFET N-CH 60V 17A/100A 8VSON
立创商城:
CSD18533Q5AT
德州仪器TI:
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm
艾睿:
Trans MOSFET N-CH Si 60V 17A 8-Pin VSONP EP T/R
安富利:
Trans MOSFET N-CH 60V 100A 8-Pin VSONP T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8 5x6mm
Verical:
Trans MOSFET N-CH Si 60V 17A 8-Pin VSONP EP T/R
Newark:
# TEXAS INSTRUMENTS CSD18533Q5AT MOSFET Transistor, N Channel, 100 A, 60 V, 0.0047 ohm, 10 V, 1.9 V
漏源极电阻 0.0047 Ω
极性 N-Channel
耗散功率 116 W
阈值电压 1.9 V
漏源极电压Vds 60 V
连续漏极电流Ids 17A
上升时间 5.5 ns
输入电容Ciss 2750pF @30VVds
下降时间 2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.2W Ta, 116W Tc
安装方式 Surface Mount
引脚数 8
封装 VSON-8
封装 VSON-8
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Contains Lead
REACH SVHC版本 2015/06/15
ECCN代码 EAR99