TEXAS INSTRUMENTS CSD19531Q5AT 晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
N 通道 NexFET™ 功率 MOSFET,Texas Instruments
### MOSFET ,Texas Instruments
欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD19531Q5AT, 110 A, Vds=100 V, 8引脚 VSON封装
得捷:
MOSFET N-CH 100V 100A 8VSON
立创商城:
CSD19531Q5AT
德州仪器TI:
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm
e络盟:
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
艾睿:
This CSD19531Q5AT power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 3300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 100V 16A 8-Pin 8VSON T/R
Chip1Stop:
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R
TME:
Transistor: N-MOSFET; unipolar; 100V; 100A; 125W; VSONP8 5x6mm
Verical:
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R
Newark:
# TEXAS INSTRUMENTS CSD19531Q5AT MOSFET Transistor, N Channel, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
针脚数 8
漏源极电阻 0.0053 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 2.7 V
漏源极电压Vds 100 V
连续漏极电流Ids 100A
上升时间 5.8 ns
输入电容Ciss 2980pF @50VVds
下降时间 5.2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.3W Ta, 125W Tc
安装方式 Surface Mount
引脚数 8
封装 VSON-8
长度 6.1 mm
宽度 5 mm
高度 1.1 mm
封装 VSON-8
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CSD19531Q5AT TI 德州仪器 | 当前型号 | 当前型号 |
CSD19532Q5B 德州仪器 | 功能相似 | CSD19531Q5AT和CSD19532Q5B的区别 |
CSD19531Q5A 德州仪器 | 功能相似 | CSD19531Q5AT和CSD19531Q5A的区别 |