N 通道 NexFET™ 功率 MOSFET,Texas Instruments### MOSFET 晶体管,Texas Instruments
N 通道 NexFET™ 功率 MOSFET,Texas Instruments
### MOSFET ,Texas Instruments
得捷:
N-CHANNEL NEXFET POWER MOSFET
立创商城:
CSD17570Q5BT
德州仪器TI:
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm
欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD17570Q5BT, 53 A, Vds=30 V, 8引脚 VSCON-CLIP封装
艾睿:
Make an effective common gate amplifier using this CSD17570Q5BT power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 30V 100A 8-Pin VSON T/R
TME:
Transistor: N-MOSFET; unipolar; 30V; 100A; VSON-CLIP8 5x6mm
Verical:
Trans MOSFET N-CH 30V 100A 8-Pin VSON-CLIP EP T/R
Win Source:
MOSFET N-CH 30V 100A 8VSON / N-Channel 30 V 100A Ta 3.2W Ta Surface Mount 8-VSON-CLIP 5x6
极性 N-CH
耗散功率 3.2 W
漏源极电压Vds 30 V
连续漏极电流Ids 100A
上升时间 36 ns
输入电容Ciss 10400pF @15VVds
下降时间 74 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3200 mW
安装方式 Surface Mount
引脚数 8
封装 VSON-Clip-8
长度 6.1 mm
宽度 5.1 mm
高度 1.05 mm
封装 VSON-Clip-8
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Contains Lead
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CSD17570Q5BT TI 德州仪器 | 当前型号 | 当前型号 |
CSD17570Q5B 德州仪器 | 类似代替 | CSD17570Q5BT和CSD17570Q5B的区别 |