CY7C1049DV33-10ZSXI

CYPRESS SEMICONDUCTOR  CY7C1049DV33-10ZSXI  芯片, 存储器, SRAM, 4M, 512KX8, 10NS, TSOP44

The is a 4MB high performance CMOS Static Random Access Memory SRAM organized as 512K words by 8-bit. Easy memory expansion is provided by an active LOW chip enable, an active LOW output enable and tri-state drivers. Data on the eight I/O pins is then written into the location specified on the address pins. You can read from the device by taking chip enable and output enable LOW while forcing write enable HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The eight input or output pins are placed in a high impedance state when the device is deselected, the outputs are disabled or during a write operation.

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Pin and function compatible with CY7C1049CV33

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High speed - 10ns

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Low active power

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Low CMOS standby power

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2V Data retention

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Automatic power-down when deselected

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TTL-compatible inputs and outputs

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Easy memory expansion with CE and OE