4兆位( 256千× 16 )静态RAM 4-Mbit 256 K × 16 Static RAM
* Temperature ranges * Industrial: -40 °C to 85 °C * Pin and function compatible with CY7C1041CV33 * High speed * tAA = 10 ns * Low active power * ICC = 90 mA * Low CMOS standby power * ISB2 = 10 mA * 2.0 V data retention * Automatic power-down when deselected * TTL compatible inputs and outputs * Easy memory expansion with CE and OE features * Available in Pb-free 48-ball VFBGA, 44-pin 400-mil molded SOJ, and 44-pin TSOP II Packages
得捷:
IC SRAM 4MBIT PARALLEL 44SOJ
立创商城:
CY7C1041DV33-10VXI
艾睿:
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ Tube
安富利:
The CY7C1041DV33 is a high performance CMOS Static RAM organized as 256 K words by 16-bits. To write to the device, take chip enable CE and write enable WE inputs LOW. If byte low enable BLE is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable BHE is LOW, then data from I/O pins is written into the location specified on the address pins.
Chip1Stop:
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ Tube
DeviceMart:
IC SRAM 4MBIT 10NS 44SOJ
Win Source:
IC SRAM 4MBIT 10NS 44SOJ
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CY7C1041DV33-10VXI Cypress Semiconductor 赛普拉斯 | 当前型号 | 当前型号 |
CY7C1041G30-10VXI 赛普拉斯 | 类似代替 | CY7C1041DV33-10VXI和CY7C1041G30-10VXI的区别 |
IS61LV25616AL-10KI Integrated Silicon SolutionISSI | 类似代替 | CY7C1041DV33-10VXI和IS61LV25616AL-10KI的区别 |
CY7C1041DV33-10VXIT 赛普拉斯 | 类似代替 | CY7C1041DV33-10VXI和CY7C1041DV33-10VXIT的区别 |