128K ×8静态RAM 128K x 8 Static RAM
Functional Description[1]
The CY7C109B/CY7C1009B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable CE1, an active HIGH Chip Enable CE2, an active LOW Output Enable OE, and three-state drivers. Writing to the device is accomplished by taking Chip Enable One CE1 and Write Enable WE inputs LOW and Chip Enable Two CE2 input HIGH. Data on the eight I/O pins I/O0 through I/O7 is then written into the location specified on the address pins A0 through A16
Features
• High speed
— tAA = 12 ns
• Low active power
— 495 mW max. 12 ns
• Low CMOS standby power
— 55 mW max. 4 mW
• 2.0V Data Retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and OE options
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
CY7C109B-15VC Cypress Semiconductor 赛普拉斯 | 当前型号 | 当前型号 |
CY7C109D-10VXI 赛普拉斯 | 功能相似 | CY7C109B-15VC和CY7C109D-10VXI的区别 |
AS7C1025B-15JIN 联盟记忆 | 功能相似 | CY7C109B-15VC和AS7C1025B-15JIN的区别 |
AS7C1025B-15JCN 联盟记忆 | 功能相似 | CY7C109B-15VC和AS7C1025B-15JCN的区别 |