CPC3980ZTR

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CPC3980ZTR概述

SOT-223 N-CH 800V

表面贴装型 N 通道 - 1.8W(Ta) SOT-223


得捷:
MOSFET N-CH 800V SOT223


贸泽:
MOSFET N-Ch Depletion Mode Vertical DMOS FET


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the CPC3980ZTR power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C. This device is made with VDMOS technology. This N channel MOSFET transistor operates in depletion mode.


TME:
Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223


Verical:
Trans MOSFET N-CH 800V 4-Pin3+Tab SOT-223 T/R


CPC3980ZTR中文资料参数规格
技术参数

通道数 1

漏源极电阻 45 Ω

极性 N-CH

耗散功率 1.8 W

漏源极电压Vds 800 V

漏源击穿电压 800 V

输入电容Ciss 115pF @25VVds

工作温度Max 125 ℃

工作温度Min 55 ℃

耗散功率Max 1.8W Ta

封装参数

安装方式 Surface Mount

引脚数 4

封装 SOT-223-3

外形尺寸

封装 SOT-223-3

物理参数

工作温度 -55℃ ~ 125℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买CPC3980ZTR
型号: CPC3980ZTR
制造商: IXYS Semiconductor
描述:SOT-223 N-CH 800V

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