CY7C109B-20VI

128K ×8静态RAM 128K x 8 Static RAM

Functional Description[1]

The CY7C109B/CY7C1009B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy

memory expansion is provided by an active LOW Chip Enable CE1, an active HIGH Chip Enable CE2, an active LOW Output Enable OE, and three-state drivers. Writing to the device is accomplished by taking Chip Enable One CE1 and Write Enable WE inputs LOW and Chip Enable Two CE2 input HIGH. Data on the eight I/O pins I/O0 through I/O7 is  then written into the location specified on the address pins A0 through A16

Features

• High speed

— tAA = 12 ns

• Low active power

— 495 mW max. 12 ns

• Low CMOS standby power

— 55 mW max. 4 mW

• 2.0V Data Retention

• Automatic power-down when deselected

• TTL-compatible inputs and outputs

• Easy memory expansion with CE1, CE2, and OE options