MAXIM INTEGRATED PRODUCTS DS1225Y-150+ 芯片, 存储器, NVRAM, CMOS 64K, 1225, DIP28 新
The is a 64K non volatile SRAM in 28 pin DIP package. It is a 65536bit fully static nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The non volatile SRAM can be used in place of existing 8K x 8 SRAMs directly conforming to popular byte wide 28 pin DIP standard. The DS1225Y also matches pin-out of 2764 EPROM or 2864 EEPROM allowing direct substitution while enhancing performance. There is no limit on number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
电源电压DC 4.50V min
工作电压 4.5V ~ 5.5V
针脚数 28
存取时间 150 ns
内存容量 8000 B
工作温度Max 70 ℃
工作温度Min 0 ℃
电源电压 4.5V ~ 5.5V
电源电压Max 5.5 V
电源电压Min 4.5 V
安装方式 Through Hole
引脚数 28
封装 DIP-28
封装 DIP-28
工作温度 0℃ ~ 70℃ TA
产品生命周期 Unknown
包装方式 Each
制造应用 嵌入式设计与开发, Embedded Design & Development
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DS1225Y-150+ Maxim Integrated 美信 | 当前型号 | 当前型号 |
DS1225Y-150 美信 | 完全替代 | DS1225Y-150+和DS1225Y-150的区别 |
DS1225Y-150IND+ 美信 | 完全替代 | DS1225Y-150+和DS1225Y-150IND+的区别 |
DS1225AD-150IND+ 美信 | 类似代替 | DS1225Y-150+和DS1225AD-150IND+的区别 |