MAXIM INTEGRATED PRODUCTS DS1220AB-120+ 芯片, 存储器, NVRAM
The is a 16K non-volatile SRAM in 24 pin EDIP package. This 16,384bit fully static non-volatile SRAM is organized as 2048 words by 8 bits. It has self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. During such condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. The NV SRAM can be used in place of existing 2K x 8 SRAMs directly conforming to popular bytewide 24 pin DIP package. The device also matches the pin-out of 2716 EPROM and 2816 EEPROM allowing direct substitution while enhancing performance. There is no limit on number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.
电源电压DC 4.75V min
针脚数 24
存取时间 120 ns
内存容量 2000 B
工作温度Max 70 ℃
工作温度Min 0 ℃
电源电压 4.75V ~ 5.25V
电源电压Max 5.25 V
电源电压Min 4.75 V
安装方式 Through Hole
引脚数 24
封装 EDIP-24
长度 34.04 mm
宽度 18.29 mm
高度 9.4 mm
封装 EDIP-24
工作温度 0℃ ~ 70℃ TA
产品生命周期 Unknown
包装方式 Each
制造应用 嵌入式设计与开发, Embedded Design & Development
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DS1220AB-120+ Maxim Integrated 美信 | 当前型号 | 当前型号 |
DS1220AB-120 美信 | 完全替代 | DS1220AB-120+和DS1220AB-120的区别 |
DS1220AD-120+ 美信 | 类似代替 | DS1220AB-120+和DS1220AD-120+的区别 |
DS1220AB-150+ 美信 | 类似代替 | DS1220AB-120+和DS1220AB-150+的区别 |