MAXIM INTEGRATED PRODUCTS DS1230Y-100+ NVSRAM, 256K, FULLY STATIC, 1230 新
静态 RAM,
欧时:
256KBIT NV SRAM PARALLEL 5V 100NS EDIP28
得捷:
IC NVSRAM 256KBIT PAR 28EDIP
贸泽:
NVRAM 256k Nonvolatile SRAM
e络盟:
The DS1230Y-100+ is a 256k Non-volatile SRAM is 262,144-bit, fully static, non-volatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular byte wide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
安富利:
NVRAM NVSRAM Parallel 256K-Bit 5V 28-Pin EDIP
Chip1Stop:
NVRAM NVSRAM Parallel 256Kbit 5V 28-Pin EDIP
Newark:
# MAXIM INTEGRATED PRODUCTS DS1230Y-100+ NVSRAM, 256K, FULLY STATIC, 1230
Win Source:
IC NVSRAM 256KBIT 100NS 28EDIP
电源电压DC 5.00 V, 5.50 V max
针脚数 28
时钟频率 100 GHz
存取时间 100 ns
内存容量 32000 B
工作温度Max 70 ℃
工作温度Min 0 ℃
电源电压 4.5V ~ 5.5V
电源电压Max 5.5 V
电源电压Min 4.5 V
安装方式 Through Hole
引脚数 28
封装 DIP-28
长度 39.37 mm
宽度 18.8 mm
高度 9.35 mm
封装 DIP-28
工作温度 0℃ ~ 70℃ TA
产品生命周期 Unknown
包装方式 Each
制造应用 工业, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DS1230Y-100+ Maxim Integrated 美信 | 当前型号 | 当前型号 |
DS1230Y-100 美信 | 完全替代 | DS1230Y-100+和DS1230Y-100的区别 |
DS1230Y-70+ 美信 | 类似代替 | DS1230Y-100+和DS1230Y-70+的区别 |