DS1245AB-70IND+

RAM，Maxim Integrated### SRAM（静态随机存取存储器）

静态 RAM，

### SRAM（静态随机存取存储器）

得捷:
IC NVSRAM 1MBIT PARALLEL 32EDIP

立创商城:
DS1245AB 70IND+

欧时:
### 静态 RAM，Maxim Integrated### SRAM（静态随机存取存储器）

贸泽:
NVRAM 1024k Nonvolatile SRAM

e络盟:
非易失性SRAM NVSRAM, 1Mbit, 128K x 8bit, 70ns读/写, 并行, 4.75V至5.25V, EDIP-32

安富利:
The DS1245 1024k Nonvolatile NV SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is nconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Chip1Stop:
NVRAM NVSRAM Parallel 1M-Bit 5V 32-Pin EDIP

DeviceMart:
IC NVSRAM 1MBIT 70NS 32DIP