ROHM DTC114EKAT146 单晶体管 双极, 数字式, NPN, 50 V, 250 MHz, 200 mW, 100 mA, 30 hFE
二极管与整流器
得捷:
TRANS PREBIAS NPN 200MW SMT3
欧时:
双电阻器数字 NPN 晶体管,ROHM### Digital Transistors, ROHM SemiconductorResistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
立创商城:
1个NPN-预偏置 50mA 50V
艾睿:
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SMT T/R
安富利:
Trans Digital BJT NPN 100mA 3-Pin SMT T/R
Chip1Stop:
Trans Digital BJT NPN 50V 100mA 3-Pin SMT T/R
TME:
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59; R1:10kΩ
Verical:
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SMT T/R
Newark:
Bipolar Pre-Biased / Digital Transistor, Digital, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
儒卓力:
**NPN DIGITALTRANS.10K/10K SMT3 **
力源芯城:
NPN 0.1A 50V偏置电阻晶体管
DeviceMart:
TRAN DIGITL NPN 50V 50MA SOT-346
Win Source:
TRANS PREBIAS NPN 200MW SMT3
额定电压DC 50.0 V
额定电流 50.0 mA
额定功率 0.2 W
极性 NPN
耗散功率 200 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 30 @5mA, 5V
额定功率Max 200 mW
直流电流增益hFE 30
工作温度Max 150 ℃
工作温度Min -55 ℃
增益带宽 250 MHz
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.6 mm
高度 1.2 mm
封装 SOT-23-3
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, 电源管理, 工业, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DTC114EKAT146 ROHM Semiconductor 罗姆半导体 | 当前型号 | 当前型号 |
DTC114EUAFRAT106 罗姆半导体 | 完全替代 | DTC114EKAT146和DTC114EUAFRAT106的区别 |
DTC114EUAT106 罗姆半导体 | 类似代替 | DTC114EKAT146和DTC114EUAT106的区别 |
DTC114ESATP 罗姆半导体 | 类似代替 | DTC114EKAT146和DTC114ESATP的区别 |