DTC143EET1G

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DTC143EET1G概述

ON SEMICONDUCTOR  DTC143EET1G  晶体管 双极预偏置/数字, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SC-75 新

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die

• Pb−Free Packages are Available

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

DTC143EET1G中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.3 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 15 @5mA, 10V

最大电流放大倍数hFE 15

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 300 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-75-3

外形尺寸

长度 1.6 mm

宽度 0.8 mm

高度 0.75 mm

封装 SC-75-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买DTC143EET1G
型号: DTC143EET1G
描述:ON SEMICONDUCTOR  DTC143EET1G  晶体管 双极预偏置/数字, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SC-75 新
替代型号DTC143EET1G
型号/品牌 代替类型 替代型号对比

DTC143EET1G

ON Semiconductor 安森美

当前型号

当前型号

DTC143EET1

安森美

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DTC143EET1G和DTC143EET1的区别

DTC143E

安森美

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DTC143EET1G和DTC143E的区别

RN1101

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