DTC143EM3T5G

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DTC143EM3T5G概述

数字晶体管( BRT ) NPN硅表面贴装晶体管与单片偏置电阻网络 Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

DTC143EM3T5G中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.6 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 15 @5mA, 10V

额定功率Max 260 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 600 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-723-3

外形尺寸

封装 SOT-723-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买DTC143EM3T5G
型号: DTC143EM3T5G
描述:数字晶体管( BRT ) NPN硅表面贴装晶体管与单片偏置电阻网络 Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
替代型号DTC143EM3T5G
型号/品牌 代替类型 替代型号对比

DTC143EM3T5G

ON Semiconductor 安森美

当前型号

当前型号

DTC143ZM3T5G

安森美

类似代替

DTC143EM3T5G和DTC143ZM3T5G的区别

DTC143EKAT146

罗姆半导体

功能相似

DTC143EM3T5G和DTC143EKAT146的区别

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