ROHM DTD113ZUT106 单晶体管 双极, NPN, 50 V, 200 MHz, 200 mW, 500 mA, 82 hFE
VCC 50V
ICMAX. 500mA
R1 1kΩ
R2 10kΩ
Features
1 Built-In Biasing Resistors
2 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see innner circuit.
3 The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects.
4 Only the on/off conditions need to be set for operation, making the circuit design easy.
5 Complementary PNP Types :DTB113ZK
6 Lead Free/RoHS Compliant.
Application
Switching circuit, Inverter circuit, Interface circuit, Driver circuit
额定电压DC 50.0 V
额定电流 500 mA
额定功率 0.2 W
极性 NPN
耗散功率 200 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 500mA
最小电流放大倍数hFE 82 @50mA, 5V
最大电流放大倍数hFE 82
额定功率Max 200 mW
直流电流增益hFE 82
工作温度Max 150 ℃
工作温度Min -55 ℃
增益带宽 200 MHz
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
长度 2.00 mm
宽度 1.25 mm
高度 0.80 mm
封装 SC-70-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
DTD113ZUT106 ROHM Semiconductor 罗姆半导体 | 当前型号 | 当前型号 |
DTD113ZKT146 罗姆半导体 | 完全替代 | DTD113ZUT106和DTD113ZKT146的区别 |
DTD113ZL-AE3-6-R 友顺 | 功能相似 | DTD113ZUT106和DTD113ZL-AE3-6-R的区别 |