DTA114YE
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V 集电极连续输出电流IC Collector CurrentIC| -70mA 基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 0.21 直流电流增益hFE DC Current GainhFE| 截止频率fT Transtion FrequencyfT| 250MHz 耗散功率Pc Power Dissipation| 0.15W/150mW Description & Applications| Feature •Digital transistors built-in resistor •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit. •The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. •Only the on/off conditions need to be set for operation, making device design easy 描述与应用| 特点 •数字(内置电阻) •内置启用偏置电阻器的逆变器电路的配置,而无需连接外部输入电阻(见等效电路)。 •偏置电阻组成的薄膜电阻完全隔离,允许输入的正偏压。他们也有优势,几乎完全消除了寄生效应。 •只有开/关条件需要设置操作,使装置的设计容易 •高密度安装就可以实现。
型号/品牌 | 代替类型 | 替代型号对比 |
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DTA114YE ROHM Semiconductor 罗姆半导体 | 当前型号 | 当前型号 |
DTA114YETL 罗姆半导体 | 功能相似 | DTA114YE和DTA114YETL的区别 |
DDTA114YE-7-F 美台 | 功能相似 | DTA114YE和DDTA114YE-7-F的区别 |
DDTA114YE-7 美台 | 功能相似 | DTA114YE和DDTA114YE-7的区别 |