DS1250W-100IND+

IC NVSRAM 4Mbit 100NS 32EDIP

Memory IC 4Mb 512K x 8 Parallel 100ns

得捷:
IC NVSRAM 4MBIT PARALLEL 32EDIP

立创商城:
4Mbit

安富利:
The DS1250W 3.3V 4096k NV SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250W devices can be used in place of existing 512k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1250W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Chip1Stop:
NVRAM NVSRAM Parallel 4M-Bit 3.3V 32-Pin EDIP

Win Source:
IC NVSRAM 4MBIT 100NS 32EDIP