DS1270Y-70IND#

非易失性SRAM NVSRAM, 16Mbit, 2M x 8bit, 70ns读/写, 并行, 4.5V至5.5V, EDIP-36

The from Products is a 16M non-volatile SRAM in 36 pin EDIP package. It is a 16,777,216bit, fully static non-volatile SRAMs organized as 2,097,152word by 8bit. Each NV SRAM has a self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for first time. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.

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Full 5V ±10% VCC operating range 4.5V to 5.5V supply voltage range, 70ns speed grade

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5 years minimum data retention in the absence of external power

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Data is automatically protected during power loss

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Unlimited write cycles, low power CMOS operation

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Write protection voltage of 4.25V to 4.5V

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Read and write access times of 70ns, operating current of 85mA

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±4µA input leakage current, ±4µA I/O leakage current, 70ns read cycle time

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Output current at 2.4V is -1mA, output current at 0.4V is 2mA

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Typical input capacitance of 20pF, typical output capacitance of 20pF

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Industrial temperature range from -40°C to +85°C