DTC115EET1

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DTC115EET1概述

偏置电阻晶体管 Bias Resistor Transistor

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die

• Pb−Free Packages are Available

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

DTC115EET1中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

极性 NPN

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

额定功率Max 200 mW

封装参数

安装方式 Surface Mount

封装 SOT-416

外形尺寸

封装 SOT-416

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买DTC115EET1
型号: DTC115EET1
描述:偏置电阻晶体管 Bias Resistor Transistor
替代型号DTC115EET1
型号/品牌 代替类型 替代型号对比

DTC115EET1

ON Semiconductor 安森美

当前型号

当前型号

DTC115EET1G

安森美

完全替代

DTC115EET1和DTC115EET1G的区别

DTC115EETL

罗姆半导体

功能相似

DTC115EET1和DTC115EETL的区别

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