DTC114TE-TP 编带
Thanks to , easily integrate NPN digital transistors into digital signal processing circuits. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 100@1mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@1mA@10mA V. Its maximum power dissipation is 150 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
额定电压DC 50.0 V
额定电流 100 mA
极性 NPN
耗散功率 150 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 100 @1mA, 5V
额定功率Max 150 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
增益带宽 250 MHz
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-523
封装 SOT-523
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DTC114TE-TP Micro Commercial Components 美微科 | 当前型号 | 当前型号 |
DTC114YKAT146 罗姆半导体 | 功能相似 | DTC114TE-TP和DTC114YKAT146的区别 |
DTA124EEBTL 罗姆半导体 | 功能相似 | DTC114TE-TP和DTA124EEBTL的区别 |
NTE123 NTE Electronics | 功能相似 | DTC114TE-TP和NTE123的区别 |