DTC113EET1G

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DTC113EET1G概述

数字晶体管( BRT) R1 = 1千欧? R2 = 1,科恩? Digital Transistors BRT R1 = 1 kOhm, R2 = 1 kOhn

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

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Simplifies Circuit Design
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Reduces Board Space
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Reduces Component Count
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S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
DTC113EET1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.3 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 3 @5mA, 10V

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 300 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-75-3

外形尺寸

封装 SC-75-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买DTC113EET1G
型号: DTC113EET1G
描述:数字晶体管( BRT) R1 = 1千欧? R2 = 1,科恩? Digital Transistors BRT R1 = 1 kOhm, R2 = 1 kOhn

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