DTA114YET1G

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DTA114YET1G概述

ON SEMICONDUCTOR  DTA114YET1G  晶体管 双极预偏置/数字, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率, SC-75 新

- 双极 BJT - 单,预偏置 PNP - 预偏压 50 V 100 mA 200 mW 表面贴装型 SC-75,SOT-416


得捷:
TRANS PREBIAS PNP 50V 100MA SC75


立创商城:
1个PNP-预偏置 100mA 50V PNP Bipolar Digital Transistor BRT


欧时:
ON Semiconductor, DTA114YET1G


e络盟:
晶体管 双极预偏置/数字, 单路PNP, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率


艾睿:
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the PNP DTA114YET1G digital transistor from ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-416 T/R


Chip1Stop:
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R


Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-416 T/R


Win Source:
TRANS PREBIAS PNP 200MW SC75


DTA114YET1G中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -100 mA

无卤素状态 Halogen Free

极性 PNP

耗散功率 0.3 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 300 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-75-3

外形尺寸

封装 SC-75-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买DTA114YET1G
型号: DTA114YET1G
描述:ON SEMICONDUCTOR  DTA114YET1G  晶体管 双极预偏置/数字, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率, SC-75 新
替代型号DTA114YET1G
型号/品牌 代替类型 替代型号对比

DTA114YET1G

ON Semiconductor 安森美

当前型号

当前型号

DTA114YET1

安森美

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