ON SEMICONDUCTOR DTA114YET1G 晶体管 双极预偏置/数字, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率, SC-75 新
- 双极 BJT - 单,预偏置 PNP - 预偏压 50 V 100 mA 200 mW 表面贴装型 SC-75,SOT-416
得捷:
TRANS PREBIAS PNP 50V 100MA SC75
立创商城:
1个PNP-预偏置 100mA 50V PNP Bipolar Digital Transistor BRT
欧时:
ON Semiconductor, DTA114YET1G
e络盟:
晶体管 双极预偏置/数字, 单路PNP, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
艾睿:
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the PNP DTA114YET1G digital transistor from ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-416 T/R
Chip1Stop:
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R
Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-416 T/R
Win Source:
TRANS PREBIAS PNP 200MW SC75
额定电压DC -50.0 V
额定电流 -100 mA
无卤素状态 Halogen Free
极性 PNP
耗散功率 0.3 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SC-75-3
封装 SC-75-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DTA114YET1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
DTA114YET1 安森美 | 类似代替 | DTA114YET1G和DTA114YET1的区别 |
DTA114YETL 罗姆半导体 | 功能相似 | DTA114YET1G和DTA114YETL的区别 |
PDTA114YE,115 恩智浦 | 功能相似 | DTA114YET1G和PDTA114YE,115的区别 |